Integrated heat spreader for multi-chip packages

ABSTRACT

An integrated heat spreader comprising a heat spreader frame that has a plurality of openings formed therethrough and a plurality of thermally conductive structures secured within the heat spreader frame openings. The thermally conductive structures can be formed to have various thicknesses which compensate for varying heights between at least two microelectronic devices in a multi-chip package. The thermally conductive structures can be secured in the heat spreader frame by sizing the openings and the thermally conductive structures such that the thermally conductive structures can be secured within the openings without requiring welding or adhesives.

RELATED APPLICATION

The present application is a Divisional of U.S. patent application Ser.No. 14/960,417 filed on Dec. 6, 2015, entitled “Integrated Heat Spreaderfor Multi-Chip Packages”, which is a Divisional of U.S. patentapplication Ser. No. 13/776,872 filed on Feb. 26, 2013, entitled“Integrated Heat Spreader for Multi-Chip Packages”, now U.S. Pat. No.9,236,323 issued on Jan. 12, 2016, which are hereby incorporate hereinby reference in their entirety and for all purposes.

TECHNICAL FIELD

Embodiments of the present description generally relate to the removalof heat from microelectronic devices, and, more particularly, tointegrated heat spreaders, wherein the integrated heat spreaders maycompensate for varying heights between at least two microelectronicdevices in a multi-chip package.

BACKGROUND

Higher performance, lower cost, increased miniaturization of integratedcircuit components, and greater packaging density of integrated circuitsare ongoing goals of the microelectronic industry. As these goals areachieved, microelectronic devices become smaller. Accordingly, thedensity of power consumption of the integrated circuit components in themicroelectronic devices has increased, which, in turn, increases theaverage junction temperature of the microelectronic device. If thetemperature of the microelectronic device becomes too high, theintegrated circuits of the microelectronic device may be damaged ordestroyed. This issue becomes even more critical when multiplemicroelectronic devices are incorporated in close proximity to oneanother in a multiple microelectronic device package, also known as amulti-chip package. Thus, thermal transfer solutions, such as integratedheat spreaders, must be utilized to remove heat from the microelectronicdevices. However, the difficulty and cost of fabricating current designsfor integrated heat spreaders has become an issue for themicroelectronic industry.

BRIEF DESCRIPTION OF THE DRAWINGS

The subject matter of the present disclosure is particularly pointed outand distinctly claimed in the concluding portion of the specification.The foregoing and other features of the present disclosure will becomemore fully apparent from the following description and appended claims,taken in conjunction with the accompanying drawings. It is understoodthat the accompanying drawings depict only several embodiments inaccordance with the present disclosure and are, therefore, not to beconsidered limiting of its scope. The disclosure will be described withadditional specificity and detail through use of the accompanyingdrawings, such that the advantages of the present disclosure can be morereadily ascertained, in which:

FIG. 1 is a side cross-sectional view of a microelectronic system, asknown in the art.

FIG. 2 is a side cross-sectional view of a microelectronic system,according to an embodiment of the present description.

FIG. 3 is an oblique view of thermally conductive structures beinginserted into a heat spreader frame, according to an embodiment of thepresent description.

FIG. 4 is a side cross-sectional view of FIG. 3 along line 4-4,according to an embodiment of the present description.

FIG. 5 is an oblique view of thermally conductive structures secured ina heat spreader frame, according to an embodiment of the presentdescription.

FIG. 6 is a side cross-sectional view of FIG. 5 along line 6-6,according to an embodiment of the present description.

FIG. 7 is a side cross-sectional view of an integrated heat spreader,according to an embodiment of the present description.

FIG. 8 is a flow chart of a process of fabricating an integrated heatspreader, according to an embodiment of the present description.

FIG. 9 is an electronic device/system, according to an embodiment of thepresent description.

DESCRIPTION OF EMBODIMENTS

In the following detailed description, reference is made to theaccompanying drawings that show, by way of illustration, specificembodiments in which the claimed subject matter may be practiced. Theseembodiments are described in sufficient detail to enable those skilledin the art to practice the subject matter. It is to be understood thatthe various embodiments, although different, are not necessarilymutually exclusive. For example, a particular feature, structure, orcharacteristic described herein, in connection with one embodiment, maybe implemented within other embodiments without departing from thespirit and scope of the claimed subject matter. References within thisspecification to “one embodiment” or “an embodiment” mean that aparticular feature, structure, or characteristic described in connectionwith the embodiment is included in at least one implementationencompassed within the present invention. Therefore, the use of thephrase “one embodiment” or “in an embodiment” does not necessarily referto the same embodiment. In addition, it is to be understood that thelocation or arrangement of individual elements within each disclosedembodiment may be modified without departing from the spirit and scopeof the claimed subject matter. The following detailed description is,therefore, not to be taken in a limiting sense, and the scope of thesubject matter is defined only by the appended claims, appropriatelyinterpreted, along with the full range of equivalents to which theappended claims are entitled. In the drawings, like numerals refer tothe same or similar elements or functionality throughout the severalviews, and that elements depicted therein are not necessarily to scalewith one another, rather individual elements may be enlarged or reducedin order to more easily comprehend the elements in the context of thepresent description.

FIG. 1 illustrates microelectronic system having a multi-chip packagecoupled with a known integrated heat spreader. In the production ofmicroelectronic systems, multi-chip packages are generally mounted onmicroelectronic substrates, which provide electrical communicationroutes between the microelectronic packages and external components. Asshown in FIG. 1, a multi-chip package 100 may comprise a plurality ofmicroelectronic devices (illustrated as elements 110 ₁, 110 ₂, and 110₃), such as microprocessors, chipsets, graphics devices, wirelessdevices, memory devices, application specific integrated circuits, orthe like, attached to a first surface 122 of a microelectronicinterposer 120 through a plurality of interconnects 142, respectively,such as reflowable solder bumps or balls, in a configuration generallyknown as a flip-chip or controlled collapse chip connection (“C4”)configuration. The device-to-interposer interconnects 142 may extendfrom bond pads 114 on an active surface 112 of each of themicroelectronic devices 110 ₁, 110 ₂, and 110 ₃ and bond pads 124 on themicroelectronic interposer first surface 122. The microelectronic devicebond pads 114 of each of the microelectronic devices 110 ₁, 110 ₂, and110 ₃, may be in electrical communication with integrated circuitry (notshown) within the microelectronic devices 110 ₁, 110 ₂, and 110 ₃. Themicroelectronic interposer 120 may include at least one conductive route(not shown) extending therethrough from at least one microelectronicinterposer first surface bond pad 124 and at least one microelectronicpackage bond pad 128 on or proximate a second surface 132 of themicroelectronic interposer 120. The microelectronic interposer 120 mayreroute a fine pitch (center-to-center distance between themicroelectronic device bond pads 114) of the microelectronic device bondpads 114 to a relatively wider pitch of the microelectronic package bondpads 128.

The multi-chip package 100 may be attached to a microelectronicsubstrate 150, such as printed circuit board, a motherboard, and thelike, through a plurality of interconnects 144, such as reflowablesolder bumps or balls. The package-to-substrate interconnects 144 mayextend between the microelectronic package bond pads 128 andsubstantially mirror-image bond pads 152 on a first surface 154 of themicroelectronic substrate 150. The microelectronic substrate bond pads152 may be in electrical communication with conductive routes (notshown) within the microelectronic substrate 150, which may provideelectrical communication routes to external components (not shown).

Both the microelectronic interposer 120 and the microelectronicsubstrate 150 may be primarily composed of any appropriate material,including, but not limited to, bismaleimine triazine resin, fireretardant grade 4 material, polyimide materials, glass reinforced epoxymatrix material, and the like, as well as laminates or multiple layersthereof. The microelectronic interposer conductive routes (not shown)and the microelectronic substrate conductive routes (not shown) may becomposed of any conductive material, including but not limited tometals, such as copper and aluminum, and alloys thereof. As will beunderstood to those skilled in the art, microelectronic interposerconductive routes (not shown) and the microelectronic substrateconductive routes (not shown) may be formed as a plurality of conductivetraces (not shown) formed on layers of dielectric material (constitutingthe layers of the microelectronic substrate material), which areconnected by conductive vias (not shown).

The package-to-substrate interconnects 144 can be made of anyappropriate material, including, but not limited to, solders materials.The solder materials may be any appropriate material, including but notlimited to, lead/tin alloys, such as 63% tin/37% lead solder, and hightin content alloys (e.g. 90% or more tin), such as tin/bismuth, eutectictin/silver, ternary tin/silver/copper, eutectic tin/copper, and similaralloys. When the multi-chip package 100 is attached to themicroelectronic substrate 150 with package-to-substrate interconnects144 made of solder, the solder is reflowed, either by heat, pressure,and/or sonic energy to secure the solder between the microelectronicpackage bond pads 128 and the microelectronic substrate bond pads 152.

As further illustrated in FIG. 1, an integrated heat spreader 200 may bein thermal contact with the multi-chip package 100, to form amicroelectronic system 160. The integrated heat spreader 200 may be madeof any appropriate thermally conductive material, such a metals andalloys, including, but not limited to, copper, aluminum, and the like.

The integrated heat spreader 200 may have a first surface 202 and anopposing second surface 204, wherein the integrated heat spreader 200includes a plurality terraces (illustrated as elements 212 ₁, 212 ₂, and212 ₃) extending from the integrated heat spreader second surface 204.As illustrated, the integrated heat spreader terraces 212 ₁, 212 ₂, and212 ₃ may have differing heights H_(T1), H_(T2), and H_(T3) extendingfrom the integrated heat spreader second surface 204 to compensate fordiffering heights H_(M1), H_(M2), and H_(M3) of the microelectronicdevices 110 ₁, 110 ₂, and 110 ₃ (i.e. the distance between themicroelectronic substrate first surface 154 and a back surface 116 ofeach microelectronic devices 110 ₁, 110 ₂, and 110 ₃), respectively, inorder to make thermal contact therebetween. A thermal interface material232, such as a thermally conductive grease or polymer, may be disposedbetween each integrated heat spreader terrace 212 ₁, 212 ₂, and 212 ₃and its respective back surface 116 of each microelectronic device 110₁, 110 ₂, and 110 ₃ to facilitate heat transfer therebetween.

The integrated heat spreader 200 may include at least one footing 242extending between the integrated heat spreader second surface 204 andthe microelectronic substrate 150, wherein the integrated heat spreaderfooting 242 may be attached to the microelectronic substrate firstsurface 154 with an adhesive material 252.

As will be understood to those skilled in the art, the fabrication ofthe integrated heat spreader 200 requires expensive stamping equipmentable to achieve high tonnage stamping forces in order to form complexelements, such as illustrate integrated heat spreader terraces 212 ₁,212 ₂, and 212 ₃. For example, for a copper integrated heat spreader,such as oxygen-free copper (99.99%), a 600 ton stamping machine may berequired to form such integrated head spreader terraces.

Embodiments of the present description relate to integrated heatspreaders that compensate for varying heights between at least twomicroelectronic devices in a multi-chip package without complex andexpensive stamping processes. The integrated heat spreader may comprisea heat spreader frame that has a plurality of openings formedtherethrough and a plurality of thermally conductive structures securedwithin the heat spreader frame openings. The thermally conductivestructures can be formed to have various thicknesses which compensatefor varying heights between at least two microelectronic devices in amulti-chip package. The thermally conductive structures can be securedin the heat spreader frame by sizing both the openings and the thermallyconductive structures such that the thermally conductive structures cansecured within the openings without requiring welding or adhesives.

As illustrated in FIG. 2, an integrated heat spreader 300 according toone embodiment of the present description may be in contact with amulti-chip package, such as multi-chip package 100 of FIG. 1. Theintegrated heat spreader 300 may include a heat spreader frame 302having a plurality of openings 304 (see FIGS. 3 and 4) extending from afirst surface 306 of the heat spreader frame 302 to a second surface 308of the heat spreader frame 302. The plurality of openings 304 may eachdefine at least one opening sidewall 312 extending between the heatspreader frame first surface 306 and the heat spreader frame secondsurface 308, and a thickness T_(F) defined between the heat spreaderframe first surface 306 and the heat spreader frame second surface 308.As further illustrated in FIG. 4, thermally conductive structures(illustrated as elements 322 ₁, 322 ₂, and 322 ₃) may be disposed withineach of the heat spreader frame openings 304. Each thermally conductivestructure 322 ₁, 322 ₂, and 322 ₃ may include a first surface 324 ₁, 324₂, and 324 ₃, respectively, an opposing second surface 326 ₁, 326 ₂, and326 ₃, respectively, and at least one sidewall 328 ₁, 328 ₂, and 328 ₃extending between the thermally conductive structure first surface 324₁, 324 ₂, and 324 ₃ and the thermally conductive structure secondsurface 326 ₁, 326 ₂, and 326 ₃. Additionally, each thermally conductivestructure 322 ₁, 322 ₂, and 322 ₃ may have a thickness T₁, T₂, and T₃,respectively, defined between the thermally conductive structure firstsurface 324 ₁, 324 ₂, and 324 ₃ and the thermally conductive structuresecond surface 326 ₁, 326 ₂, and 326 ₃. In one embodiment, each of theplurality of thermally conductive structures 322 ₁, 322 ₂, and 322 ₃ maybe secured within a corresponding plurality of heat spreader frameopenings 304 with the at least one thermally conductive structuresidewall 328 ₁, 328 ₂, and 328 ₃ abutting its corresponding heatspreader frame sidewall 312. In another embodiment, each thermallyconductive structure first surface 324 ₁, 324 ₂, and 324 ₃ of each ofthe plurality of thermally conductive structures 322 ₁, 322 ₂, and 322 ₃are substantially planar to the heat spreader frame first surface 306.

As further shown in FIG. 2, the second surface 326 ₁, 326 ₂, and 326 ₃of each of the plurality of thermally conductive structures 322 ₁, 322₂, and 322 ₃, respectively, may be in thermal contact with the backsurface 116 of each corresponding microelectronic device 110 ₁, 110 ₂,and 110 ₃, respectively, of the multi-chip package 100. The thermalinterface material 232, such as a thermally conductive grease oradhesive, may be disposed between each thermally conductive structuresecond surface 326 ₁, 326 ₂, and 326 ₃ and its respectivemicroelectronic device 110 ₁, 110 ₂, and 110 ₃ to facilitate heattransfer therebetween. The thermally conductive structures 322 ₁, 322 ₂,and 322 ₃ may be formed to have various thicknesses T₁, T₂, and T₃ tocompensate for differing heights H_(M1), H_(M2), and H_(M3) of themicroelectronic devices 110 ₁, 110 ₂, and 110 ₃ in a multi-chip package100. Thus, the thickness T₁, T₂, and T₃ of at least one of the pluralityof thermally conductive structures 322 ₁, 322 ₂, and 322 ₃ may begreater than the thickness T₁, T₂, and T₃ of another one of theplurality of thermally conductive structures 322 ₁, 322 ₂, and 322 ₃.Furthermore, the thickness T₁, T₂, and T₃ of at least one of theplurality of thermally conductive structures 322 ₁, 322 ₂, and 322 ₃ maybe greater than the thickness T_(F) of the heat spreader frame 302.

The integrated heat spreader 300 may include a footing 342 extendingbetween the heat spreader frame second surface 308 and themicroelectronic substrate 150, wherein the integrated heat spreaderfooting 342 may be attached to the microelectronic substrate 150 withthe adhesive material 252.

FIGS. 3-7 illustrate a method of fabricating a microelectronic structureaccording to an embodiment of the present description. As illustrated inFIGS. 3 and 4, the heat spreader frame 302 may be formed having theplurality of openings 304 extending from the heat spreader frame firstsurface 306 and the opposing heat spreader frame opposing second surface308. As previously discussed with regard to FIG. 2, the plurality ofheat spreader frame openings 304 may each define at least one openingsidewall 312 extending between the heat spreader frame first surface 306and the heat spreader frame second surface 308, and the thickness T_(F)defined between the heat spreader frame first surface 306 and the heatspreader frame second surface 308. The heat spreader frame openings 304may be made by any appropriate means, including but not limited,drilling, stamping, molding, and the like.

As further shown in FIGS. 3 and 4, a plurality of thermally conductivestructures (illustrated as elements 322 ₁, 322 ₂, and 322 ₃ withadditional elements 322 ₄, 322 ₅, and 322 ₆ illustrated in FIG. 3,hereinafter may be referred to singularly or collectively as “322 _(n)”)may be formed. As previously discussed with regard to FIG. 2, eachthermally conductive structure 322 _(n) may include the first surface(illustrated as elements 324 ₁, 324 ₂, and 324 ₃ in FIG. 4)respectively, the opposing second surface (illustrated as elements 326₁, 326 ₂, and 326 ₃ in FIG. 4), and at least one sidewall (illustratedas elements 328 ₁, 328 ₂, and 328 ₃ in FIG. 4). Additionally, eachthermally conductive structure 322 ₁, 322 ₂, and 322 ₃ may have athickness T₁, T₂, and T₃, (see FIG. 4) respectively, defined between thethermally conductive structure first surface 324 ₁, 324 ₂, and 324 ₃ andthe thermally conductive structure second surface 326 ₁, 326 ₂, and 326₃.

As shown in FIGS. 5 and 6, each thermally conductive structure 322 _(n)may be inserted and secured within a corresponding heat spreader frameopening 304. As previously discussed with regard to FIG. 2, each of theplurality of thermally conductive structures 322 ₁, 322 ₂, and 322 ₃ maybe secured within a corresponding plurality of openings 304 with the atleast one thermally conductive structure sidewall 328 ₁, 328 ₂, and 328₃ abutting its corresponding heat spreader frame sidewall 304. Asfurther illustrated in FIGS. 5 and 6, each thermally conductivestructure first surface 324 ₁, 324 ₂, and 324 ₃ of each of the pluralityof thermally conductive structures 322 ₁, 322 ₂, and 322 ₃ may besubstantially planar to the heat spreader frame first surface 306. Theheat spreader frame openings 302 and the thermally conductive structures322 _(n) may be sized such that the thermally conductive structures 322_(n) can be press-fit, beaten, or swaged into the heat spreader frameopenings 304, which secures each thermally conductive structure 322 _(n)by pressure between its at least one thermally conductive structuresidewall (e.g. elements 328 ₁, 328 ₂, and 328 ₃) and its correspondingat least one heat spreader frame sidewall 304 without requiring weldingor adhesives.

The selection of the material used for the thermally conductivestructures 322 _(n) and the heat spreader frame 302 may depend onmaterial cost and the thermal performance required, as will beunderstood to those skilled in the art. However, the heat spreader framemay formed from a material that is less expensive and less thermallyconductive than the thermally conductive structures 322 _(n), and may beany appropriate material, including, but not limited to, copper,aluminum, stainless steel, plastic materials, and the like. Thethermally conductive structures 322 _(n) may be any appropriatethermally conductive material including metals (in general, copper,aluminum, alloys thereof, and the like) and carbon materials. Thethermally conductive structures 322 _(n) may be any appropriate shape;however, in one embodiment of the present invention, the thermallyconductive structures 322 _(n) may be substantially cuboid for purposesof low cost from manufacturing, as will be understood to those skilledin the art.

A footing 342 may be formed from the heat spreader frame 302 to form theintegrated heat spreader 300, as shown in FIG. 7. The footing 342 may bemade by stamping the heat spreader frame 302. It is understood that thefooting 342 may be formed before the attachment of the thermallyconductive structures 322 _(n). It is further understood that the heatspreader frame 302 with the footing 342 may be formed with a moldingprocess or other such appropriate process.

The integrated heat spreader 300 of FIG. 7 may be attached to themicroelectronic substrate 150 in the manner shown and discussed withregard to FIG. 2, such that the second surface 326 ₁, 326 ₂, and 326 ₃of each of the plurality of thermally conductive structures 322 ₁, 322₂, and 322 ₃, respectively, may be in thermal contact with the backsurface 116 of each corresponding microelectronic device 110 ₁, 110 ₂,and 110 ₃, respectively, of the multi-chip package 100, and such at thefooting 342 may be attached to the microelectronic substrate 150 withthe adhesive material 252. It is understood that the dimensions of eachthermally conductive structures 322 _(n) may be sized to fit anydimension of the microelectronic devices, e.g. elements 110 ₁, 110 ₂,and 110 ₃.

FIG. 8 is a flow chart of a process 400 of fabricating a microelectronicstructure according to an embodiment of the present description, such asillustrated in FIGS. 3-7. As set forth in block 410, a heat spreaderframe may be formed having a plurality of openings extending from afirst surface of the heat spreader frame to a second surface of the heatspreader frame. A plurality of thermally conductive structures may beformed, as set forth in block 420. As set forth in block 430, each ofthe plurality of thermally conductive structures may be secured withincorresponding heat spreader frame openings.

FIG. 9 illustrates an embodiment of an electronic system/device 500,such as a portable computer, a desktop computer, a mobile telephone, adigital camera, a digital music player, a web tablet/pad device, apersonal digital assistant, a pager, an instant messaging device, orother devices. The electronic system/device 500 may be adapted totransmit and/or receive information wirelessly, such as through awireless local area network (WLAN) system, a wireless personal areanetwork (WPAN) system, and/or a cellular network. The electronicsystem/device 500 may include a microelectronic motherboard or substrate510 disposed within a device housing 520. The microelectronicmotherboard/substrate 510 may have various electronic componentselectrically coupled thereto including an integrated heat spreader 530,as described in the embodiments of the present description, attached tothe microelectronic motherboard/substrate 510, wherein a multi-chippackage (not shown) is disposed between the integrated heat spreader 530and the microelectronic motherboard/substrate 510. The microelectronicmotherboard/substrate 510 may be attached to various peripheral devicesincluding an input device 550, such as keypad, and a display device 560,such an LCD display. It is understood that the display device 560 mayalso function as the input device, if the display device 560 is touchsensitive.

It is understood that the subject matter of the present description isnot necessarily limited to specific applications illustrated in FIGS.1-9. The subject matter may be applied to other microelectronic deviceand assembly applications, as well as any appropriate heat removalapplication, as will be understood to those skilled in the art.

The following examples pertain to further embodiments, wherein Example 1is an integrated heat spreader, comprising a heat spreader frame havinga plurality of openings extending from a first surface of the heatspreader frame to a second surface of the heat spreader frame, whereinthe plurality of openings each define at least one opening sidewallextending between the heat spreader frame first surface and the heatspreader frame second surface; a plurality of thermally conductivestructures, each having a first surface, an opposing second surface, aleast one sidewall extending between the thermally conductive structurefirst surface and the thermally conductive structure second surface,wherein each of the plurality of thermally conductive structures aresecured within a corresponding plurality of openings with the at leastone thermally conductive structure sidewall abutting its correspondingat least one heat spreader frame sidewall.

In Example 2, the subject matter of Example 1 can optionally includeeach of the plurality of thermally conductive structures being securedwithin a corresponding plurality of openings by pressure between the atleast one thermally conductive structure sidewall and its correspondingat least one heat spreader frame sidewall.

In Example 3, the subject matter of any one of Examples 1-2 canoptionally include the thermally conductive structure first surface ofeach of the plurality of thermally conductive structures beingsubstantially planar to the heat spreader frame first surface.

In Example 4, the subject matter of any one of Examples 1-3 canoptionally include the heat spreader frame having a thickness definedbetween the heat spreader frame first surface and the heat spreaderframe second surface; wherein each thermally conductive structure havinga thickness defined between its thermally conductive structure firstsurface and the thermally conductive structure second surface; andwherein the thickness of at least one of the plurality of thermallyconductive structures is greater than the thickness of the heat spreaderframe.

In Example 5, the subject matter of any one of Examples 1-4 canoptionally include each thermally conductive structure having athickness defined between its thermally conductive structure firstsurface and the thermally conductive structure second surface; andwherein the thickness of at least one of the plurality of thermallyconductive structures is greater than the thickness of another one ofthe plurality of thermally conductive structures.

In Example 6, a microelectronic structure includes a microelectronicsubstrate; a multi-chip package electrically connected to themicroelectronic substrate, wherein the multi-chip packing includes aplurality of microelectronic devices disposed thereon; and an integratedheat spreader attached to the microelectronic substrate, comprising: aheat spreader frame having a plurality of openings extending from afirst surface of the heat spreader frame to a second surface of the heatspreader frame, wherein the plurality of openings each define at leastone opening sidewall extending between the heat spreader frame firstsurface and the heat spreader frame second surface; and a plurality ofthermally conductive structures, each having a first surface, anopposing second surface, a least one sidewall extending between thethermally conductive structure first surface and the thermallyconductive structure second surface, wherein each of the plurality ofthermally conductive structures are secured within a correspondingplurality of openings with the at least one thermally conductivestructure sidewall abutting its corresponding at least one heat spreaderframe sidewall, and wherein the second surface of each of the pluralityof thermally conductive structures is in thermal contact with acorresponding microelectronic device of the multi-chip package.

In Example 7, the subject matter of Example 6 can optionally includeeach of the plurality of thermally conductive structures being securedwithin a corresponding plurality of openings by pressure between the atleast one thermally conductive structure sidewall and its correspondingat least one heat spreader frame sidewall.

In Example 8, the subject matter of any one of Examples 6-7 canoptionally include the thermally conductive structure first surface ofeach of the plurality of thermally conductive structures beingsubstantially planar to the heat spreader frame first surface.

In Example 9, the subject matter of any one of Examples 6-8 canoptionally include the heat spreader frame having a thickness definedbetween the heat spreader frame first surface and the heat spreaderframe second surface; wherein each thermally conductive structure has athickness defined between its thermally conductive structure firstsurface and the thermally conductive structure second surface; andwherein the thickness of at least one of the plurality of thermallyconductive structures is greater than the thickness of the heat spreaderframe.

In Example 10, the subject matter of any one of Examples 6-9 canoptionally include each thermally conductive structure having athickness defined between its thermally conductive structure firstsurface and the thermally conductive structure second surface; andwherein the thickness of at least one of the plurality of thermallyconductive structures is greater than the thickness of another one ofthe plurality of thermally conductive structures.

In Example 11, the subject matter of any one of Examples 6-10 canoptionally include the heat spreader frame being attached to themicroelectronic substrate.

In Example 12, the subject matter of Example 11, can optionally includeat least one footing extending from the heat spreader frame, wherein theat least one heat spreader frame footing is attached to themicroelectronic substrate.

In Example 13, an electronic system comprises a housing; amicroelectronic substrate disposed within the housing; a microelectronicsubstrate; a multi-chip package electrically connected to themicroelectronic substrate, wherein the multi-chip packing includes aplurality of microelectronic devices disposed thereon; and an integratedheat spreader attached to the microelectronic substrate, comprising: aheat spreader frame having a plurality of openings extending from afirst surface of the heat spreader frame to a second surface of the heatspreader frame, wherein the plurality of openings each define at leastone opening sidewall extending between the heat spreader frame firstsurface and the heat spreader frame second surface; and a plurality ofthermally conductive structures, each having a first surface, anopposing second surface, a least one sidewall extending between thethermally conductive structure first surface and the thermallyconductive structure second surface, wherein each of the plurality ofthermally conductive structures are secured within a correspondingplurality of openings with the at least one thermally conductivestructure sidewall abutting its corresponding at least one heat spreaderframe sidewall, and wherein the second surface of each of the pluralityof thermally conductive structures is in thermal contact with acorresponding microelectronic device of the multi-chip package.

In Example 14, the subject matter of Example 13 can optionally includeeach of the plurality of thermally conductive structures are securedwithin a corresponding plurality of openings by pressure between the atleast one thermally conductive structure sidewall and its correspondingat least one heat spreader frame sidewall.

In Example 15, the subject matter of any one of Examples 13-14 canoptionally include the thermally conductive structure first surface ofeach of the plurality of thermally conductive structures beingsubstantially planar to the heat spreader frame first surface.

In Example 16, the subject matter of any one of Examples 13-15 canoptionally include the heat spreader frame having a thickness definedbetween the heat spreader frame first surface and the heat spreaderframe second surface; wherein each thermally conductive structure have athickness defined between its thermally conductive structure firstsurface and the thermally conductive structure second surface; andwherein the thickness of at least one of the plurality of thermallyconductive structures is greater than the thickness of the heat spreaderframe.

In Example 17, the subject matter of any one of Examples 13-16 canoptionally include each thermally conductive structure having athickness defined between its thermally conductive structure firstsurface and the thermally conductive structure second surface; andwherein the thickness of at least one of the plurality of thermallyconductive structures is greater than the thickness of another one ofthe plurality of thermally conductive structures.

In Example 18, the subject matter of any one of Examples 13-17 canoptionally include the heat spreader frame attached to themicroelectronic substrate.

In Example 19, the subject matter of Example 18 can optionally includeat least one footing extending from the heat spreader frame and whereinthe at least one heat spreader frame footing is attached to themicroelectronic substrate.

In Example 20, a microelectronic structure is fabricated by forming aheat spreader frame having a plurality of openings extending from afirst surface of the heat spreader frame to a second surface of the heatspreader frame; forming a plurality of thermally conductive structures;and securing each of the plurality of thermally conductive structureswithin corresponding heat spreader frame openings.

In Example 21, the subject matter of Example 20 can optionally includesecuring each of the plurality of thermally conductive structures withinthe corresponding plurality of openings by pressure between the at leastone thermally conductive structure sidewall and its corresponding atleast one heat spreader frame sidewall.

In Example 22, the subject matter of any one of Examples 20-21 canoptionally include securing each of the plurality of thermallyconductive structure such that the thermally conductive structure firstsurface of each of the plurality of thermally conductive structures aresubstantially planar to the heat spreader frame first surface.

In Example 23, the subject matter of any one of Examples 20-22 canoptionally include forming the heat spreader frame to have a thicknessdefined between the heat spreader frame first surface and the heatspreader frame second surface; wherein forming the plurality ofthermally conductive structures comprises forming each thermallyconductive structure to have a thickness defined between its thermallyconductive structure first surface and the thermally conductivestructure second surface; and wherein the thickness of at least one ofthe plurality of thermally conductive structures is greater than thethickness of the heat spreader frame.

In Example 24, the subject matter of any one of Examples 20-23 canoptionally include forming the plurality of thermally conductivestructures comprising forming each thermally conductive structure tohave a thickness defined between its thermally conductive structurefirst surface and the thermally conductive structure second surface; andwherein the thickness of at least one of the plurality of thermallyconductive structures is greater than the thickness of another one ofthe plurality of thermally conductive structures.

In Example 25, the subject matter of any one of Examples 20-24 canoptionally include forming a microelectronic substrate; electricallyconnecting a multi-chip package to the microelectronic substrate,wherein the multi-chip packing includes a plurality of microelectronicdevices disposed thereon; and thermally contacting the second surface ofeach of the plurality of thermally conductive structures with acorresponding microelectronic device of the multi-chip package.

In Example 26, the subject matter of Example 25 can optionally includeattaching the heat spreader frame to the microelectronic substrate.

In Example 27, the subject matter of Example 26 can optionally includeattaching at least one footing extending from the heat spreader to themicroelectronic substrate.

Having thus described in detail embodiments of the present invention, itis understood that the invention defined by the appended claims is notto be limited by particular details set forth in the above description,as many apparent variations thereof are possible without departing fromthe spirit or scope thereof.

What is claimed is:
 1. A method, comprising: forming a heat spreaderframe having a plurality of openings extending from a first surface ofthe heat spreader frame to a second surface of the heat spreader frame;forming a plurality of thermally conductive structures; and securingeach of the plurality of thermally conductive structures withincorresponding heat spreader frame openings.
 2. The method of claim 1,wherein securing each of the plurality of thermally conductivestructures within the corresponding plurality of openings comprisessecuring each of the plurality of thermally conductive structures withinthe corresponding plurality of openings by pressure between the at leastone thermally conductive structure sidewall and its corresponding atleast one heat spreader frame sidewall.
 3. The method of claim 1,wherein securing each of the plurality of thermally conductivestructures within corresponding heat spreader frame openings furthercomprises securing each of the plurality of thermally conductivestructures within corresponding heat spreader frame openings such thatthe thermally conductive structure first surface of each of theplurality of thermally conductive structures are substantially planar tothe heat spreader frame first surface.
 4. The method of claim 1, whereinforming the heat spreader frame comprises forming the heat spreaderframe to have a thickness defined between the heat spreader frame firstsurface and the heat spreader frame second surface; wherein forming theplurality of thermally conductive structures comprises forming eachthermally conductive structures to have a thickness defined between itsthermally conductive structure first surface and the thermallyconductive structure second surface; and wherein the thickness of atleast one of the plurality of thermally conductive structures is greaterthan the thickness of the heat spreader frame.
 5. The method of claim 1,wherein forming the plurality of thermally conductive structurescomprises forming each thermally conductive structure to have athickness defined between its thermally conductive structure firstsurface and the thermally conductive structure second surface; andwherein the thickness of at least one of the plurality of thermallyconductive structures is greater than the thickness of another one ofthe plurality of thermally conductive structures.
 6. The method of claim1, wherein forming the plurality thermally conductive structurescomprises forming at least one of the plurality of thermally conductivestructures from a material differs from a material used for forming theheat spreader frame.
 7. The method of claim 1, wherein forming the heatspreader frame comprises forming the heat spreader for a materialselected from the groups consisting of copper, aluminum, stainlesssteel, and plastic.
 8. The method of claim 1, wherein forming theplurality thermally conductive structures comprises forming at least oneof the plurality of thermally conductive structures from a materialselected from the groups consisting of copper, aluminum, and carbonmaterials.
 9. The method of claim 1, further comprising: forming amicroelectronic substrate; electrically connecting a multi-chip packageto the microelectronic substrate, wherein the multi-chip packingincludes a plurality of microelectronic devices disposed thereon; andthermally contacting the second surface of each of the plurality ofthermally conductive structures with a corresponding microelectronicdevice of the multi-chip package.
 10. The method of claim 9, furthercomprising attaching the heat spreader frame to the microelectronicsubstrate.
 11. The method of claim 10, wherein attaching the heatspreader frame to the microelectronic substrate comprises attaching atleast one footing extending from the heat spreader to themicroelectronic substrate.
 12. A method, comprising: forming a heatspreader frame having a plurality of openings extending from a firstsurface of the heat spreader frame to a second surface of the heatspreader frame and having a thickness defined between the heat spreaderframe first surface and the heat spreader frame second surface; forminga plurality of thermally conductive structures, wherein each ofthermally conductive structure of the plurality of thermally conductivestructures has a first surface, a second surface, and a thicknessdefined between the thermally conductive structure first surface and thethermally conductive structure second surface; and wherein the thicknessof at least one of the plurality of thermally conductive structures isgreater than the thickness of the heat spreader frame; and securing eachof the plurality of thermally conductive structures within correspondingheat spreader frame openings, such that the thermally conductivestructure first surface of each of the plurality of thermally conductivestructures are substantially planar to the heat spreader frame firstsurface.
 13. The method of claim 12, wherein securing each of theplurality of thermally conductive structures within the correspondingplurality of openings comprises securing each of the plurality ofthermally conductive structures within the corresponding plurality ofopenings by pressure between the at least one thermally conductivestructure sidewall and its corresponding at least one heat spreaderframe sidewall.
 14. The method of claim 12, wherein the thickness of atleast one of the plurality of thermally conductive structures is greaterthan the thickness of another one of the plurality of thermallyconductive structures.
 15. The method of claim 12, further comprising:forming a microelectronic substrate; electrically connecting amulti-chip package to the microelectronic substrate, wherein themulti-chip packing includes a plurality of microelectronic devicesdisposed thereon; and thermally contacting the second surface of each ofthe plurality of thermally conductive structures with a correspondingmicroelectronic device of the multi-chip package.
 16. The method ofclaim 15, further comprising attaching the heat spreader frame to themicroelectronic substrate.
 17. The method of claim 16, wherein attachingthe heat spreader frame to the microelectronic substrate comprisesattaching at least one footing extending from the heat spreader to themicroelectronic substrate.
 18. The method of claim 12, wherein formingthe plurality thermally conductive structures comprises forming at leastone of the plurality of thermally conductive structures from a materialdiffers from a material used for forming the heat spreader frame. 19.The method of claim 12, wherein forming the heat spreader framecomprises forming the heat spreader for a material selected from thegroups consisting of copper, aluminum, stainless steel, and plastic. 20.The method of claim 12, wherein forming the plurality thermallyconductive structures comprises forming at least one of the plurality ofthermally conductive structures from a material selected from the groupsconsisting of copper, aluminum, and carbon materials.